Silicon Carbide (SiC) Schottky Barrier Diode (SBD)-based Power Modules

Variants:

• 700V
• 1200V
• 1700V

Topologies:

• Два диода
• Пълен мост
• Общ катод
• Общ анод-катод
• 3-фазен мост

SiC MOSFETs, SiC Schottky Barrier Diodes (SBDs) and paired them in SiC Power Modules offer:

• Reduced costs
• Improved system efficiency with lower switching losses
• High-power density for smaller footprint to reduce size and weight
• Higher operating temperature
• 3× more thermally conductive than silicon
• Reduced cooling needs, smaller filters and passives
• Higher switching frequency
• Ten times lower Failure In Time (FIT) rate, than comparable IGBTs at rated voltages
• Extremely low parasitic (stray) inductance at < 2.9 nH in SiC modules
• Wide range of 700V, 1200V and 1700V SiC products
• Higher SiC power density vs. silicon enables smaller magnetics, transformers, filters and passives, resulting in a compact form factor

More information about MICROCHIP SiC products you can find here: Silicon Carbide (SiC) Devices and Power Modules

Development Tools:

The MSCSICPFC/REF5 is a 30 kW 3-Phase Vienna Power Factor Correction (PFC) reference design for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) charger and high-power switch mode power supply applications.

• Designed for 30 kW applications
• 98.6% efficiency at 30 kW output power.
• 1200V Silicon Carbide (SiC) diodes and 700V SiC MOSFETs
• 3-phase 380/400V RMS input voltage, 50 Hz or 60 Hz
• 140 kHz switching frequency
• 700V DC output voltage